ข้อมูลสัญลักษณ์จำแนกการออกแบบผลิตภัณฑ์ระหว่างประเทศ


รหัส / code คำอธิบาย / code name Version
H01L0021336000 with an insulated gate 1
H01L0021337000 with a PN junction gate 1
H01L0021338000 with a Schottky gate 1
H01L0021339000 Charge transfer devices 1
H01L0021340000 the devices having semiconductor bodies not provided for in groups ; H01L0021060000, H01L0021160000, and H01L0021180000; with or without impurities, e.g. doping materials 1
H01L0021360000 Deposition of semiconductor materials on a substrate, e.g. epitaxial growth 1
H01L0021363000 using physical deposition, e.g. vacuum deposition, sputtering 1
H01L0021365000 using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition 1
H01L0021368000 using liquid deposition 1
H01L0021380000 Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions 1
H01L0021383000 using diffusion into, or out of, a solid from or into a gaseous phase 1
H01L0021385000 using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer 1
H01L0021388000 using diffusion into, or out of, a solid from or into a liquid phase, e.g. alloy diffusion processes 1
H01L0021400000 Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body 1
H01L0021420000 Bombardment with radiation 1