ข้อมูลสัญลักษณ์จำแนกการออกแบบผลิตภัณฑ์ระหว่างประเทศ


รหัส / code คำอธิบาย / code name Version
H01L0021301000 to subdivide a semiconductor body into separate parts, e.g. making partitions (cutting H01L0021304000) 1
H01L0021302000 to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting 1
H01L0021304000 Mechanical treatment, e.g. grinding, polishing, cutting 1
H01L0021306000 Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers H01L0021310000; after-treatment of insulating layers H01L0021310500) 1
H01L0021306300 Electrolytic etching 1
H01L0021306500 Plasma etching; Reactive-ion etching 1
H01L0021308000 using masks (H01L0021306300, H01L0021306500, take precedence);; 1
H01L0021310000 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques (encapsulating layers H01L0021560000); After-treatment of these layers; Selection of materials for these layers 1
H01L0021310500 After-treatment 1
H01L0021311000 Etching the insulating layers 1
H01L0021311500 Doping the insulating layers 1
H01L0021312000 Organic layers, e.g. photoresist (H01L0021310500, H01L0021320000 take precedence);; 1
H01L0021314000 Inorganic layers (H01L0021310500, H01L0021320000 take precedence);; 1
H01L0021316000 composed of oxides or glassy oxides or oxide-based glass 1
H01L0021318000 composed of nitrides 1