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ข้อมูลสัญลักษณ์จำแนกการออกแบบผลิตภัณฑ์ระหว่างประเทศ

รหัส / code คำอธิบาย / code name Version
H01L0033020000 characterised by the semiconductor bodies 1
H01L0033040000 with a quantum effect structure or superlattice, e.g. tunnel junction 1
H01L0033060000 within the light emitting region, e.g. quantum confinement structure or tunnel barrier 1
H01L0033080000 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body (H01L0027150000 takes precedence);; 1
H01L0033100000 with a light reflecting structure, e.g. semiconductor Bragg reflector 1
H01L0033120000 with a stress relaxation structure, e.g. buffer layer 1
H01L0033140000 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure 1
H01L0033160000 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous 1
H01L0033180000 within the light emitting region 1
H01L0033200000 with a particular shape, e.g. curved or truncated substrate 1
H01L0033220000 Roughened surfaces, e.g. at the interface between epitaxial layers 1
H01L0033240000 of the light emitting region, e.g. non-planar junction 1
H01L0033260000 Materials of the light emitting region 1
H01L0033280000 containing only elements of group II and group VI of the periodic system 1
H01L0033300000 containing only elements of group III and group V of the periodic system 1
จำนวนรหัสข้อมูล 15 จาก 73902