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ข้อมูลสัญลักษณ์จำแนกการออกแบบผลิตภัณฑ์ระหว่างประเทศ

รหัส / code คำอธิบาย / code name Version
H01L0031113000 being of the conductor-insulator- semiconductor type, e.g. metal- insulator-semiconductor field-effect transistor 1
H01L0031115000 Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation 1
H01L0031117000 of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors 1
H01L0031118000 of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors 1
H01L0031119000 characterised by field-effect operation, e.g. MIS type detectors 1
H01L0031120000 structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto (electroluminescent light sources per seH05B0033000000) 1
H01L0031140000 the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers, image storage devices 1
H01L0031147000 the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier 1
H01L0031153000 formed in, or on, a common substrate 1
H01L0031160000 the semiconductor device sensitive to radiation being controlled by the light source or sources 1
H01L0031167000 the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier 1
H01L0031173000 formed in, or on, a common substrate 1
H01L0031180000 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof 1
H01L0031200000 such devices or parts thereof comprising amorphous semiconductor material 1
H01L0033000000 Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (H01L0051500000 takes precedence;devices consisting of a plurality of semiconductor components formed in or on a common substrate and including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission H01L0027150000; semiconductor lasers H01S0005000000) 1
จำนวนรหัสข้อมูล 15 จาก 73902