ข้อมูลสัญลักษณ์จำแนกการออกแบบผลิตภัณฑ์ระหว่างประเทศ


รหัส / code คำอธิบาย / code name Version
H01L0031077000 the devices comprising monocrystalline or polycrystalline materials 1
H01L0031078000 including different types of potential barriers provided for in two or more of groups ; H01L0031061000-H01L0031075000 1
H01L0031080000 in which radiation controls flow of current through the device, e.g. photoresistors 1
H01L0031090000 Devices sensitive to infra-red, visible or ultra- violet radiation (H01L0031101000 takes precedence);; 1
H01L0031100000 characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors 1
H01L0031101000 Devices sensitive to infra-red, visible or ultra-violet radiation 1
H01L0031102000 characterised by only one potential barrier or surface barrier 1
H01L0031103000 the potential barrier being of the PN homojunction type 1
H01L0031105000 the potential barrier being of the PIN type 1
H01L0031107000 the potential barrier working in avalanche mode, e.g. avalanche photodiode 1
H01L0031108000 the potential barrier being of the Schottky type 1
H01L0031109000 the potential barrier being of the PN heterojunction type 1
H01L0031110000 characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor 1
H01L0031111000 characterised by at least three potential barriers, e.g. photothyristor 1
H01L0031112000 characterised by field-effect operation, e.g. junction field-effect photo- transistor 1