ข้อมูลสัญลักษณ์จำแนกการออกแบบผลิตภัณฑ์ระหว่างประเทศ


รหัส / code คำอธิบาย / code name Version
G11C0011403000 with charge regeneration common to a multiplicity of memory cells, i.e. external refresh 1
G11C0011404000 with one charge-transfer gate, e.g. MOS transistor, per cell 1
G11C0011405000 with three charge-transfer gates, e.g. MOS transistors, per cell 1
G11C0011406000 Management or control of the refreshing or charge-regeneration cycles 1
G11C0011406300 Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing 1
G11C0011406700 for memory cells of the bipolar type 1
G11C0011407000 for memory cells of the field-effect type 1
G11C0011407200 Circuits for initialization, powering up or down, clearing memory or presetting 1
G11C0011407400 Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits 1
G11C0011407600 Timing circuits (for regeneration management G11C0011406000) 1
G11C0011407800 Safety or protection circuits, e.g. for preventing inadvertent or unauthorised reading or writing; Status cells; Test cells (protection of memory contents during checking or testing G11C0029520000) 1
G11C0011408000 Address circuits 1
G11C0011409000 Read-write [R-W] circuits 1
G11C0011409100 Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating 1
G11C0011409300 Input/output [I/O] data interface arrangements, e.g. data buffers (level conversion circuits in general H03K0019017500) 1