ข้อมูลสัญลักษณ์จำแนกการออกแบบผลิตภัณฑ์ระหว่างประเทศ


รหัส / code คำอธิบาย / code name Version
G11C0011060000 using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element 1
G11C0011061000 using elements with single aperture or magnetic loop for storage, one element per bit, and for destructive read-out 1
G11C0011063000 bit-organized, such as, 2L/2D-, 3D-organization, i.e. for selection of an element by means of at least two coincident partial currents both for reading and for writing 1
G11C0011065000 word-organized, such as 2D-organization, or linear selection, i.e. for selection of all the elements of a word by means of a single full current for reading 1
G11C0011067000 using elements with single aperture or magnetic loop for storage, one element per bit, and for non-destructive read-out 1
G11C0011080000 using multi-aperture storage elements, e.g. using transfluxors; using plates incorporating several individual multi-aperture storage elements (G11C0011100000 takes precedence;using multi-aperture plates in which each individual aperture forms a storage element G11C0011060000) 1
G11C0011100000 using multi-axial storage elements 1
G11C0011120000 using tensors; using twistors, i.e. elements in which one axis of magnetisation is twisted 1
G11C0011140000 using thin-film elements 1
G11C0011150000 using multiple magnetic layers (G11C0011155000 takes precedence);; 1
G11C0011155000 with cylindrical configuration 1
G11C0011160000 using elements in which the storage effect is based on magnetic spin effect 1
G11C0011180000 using Hall-effect devices 1
G11C0011190000 using non-linear reactive devices in resonant circuits 1
G11C0011200000 using parametrons 1