ข้อมูลสัญลักษณ์จำแนกการออกแบบผลิตภัณฑ์ระหว่างประเทศ


รหัส / code คำอธิบาย / code name Version
G11C0011210000 using electric elements 1
G11C0011220000 using ferroelectric elements 1
G11C0011230000 using electrostatic storage on a common layer, e.g. Forrester-Haeff tubes (G11C0011220000 takes precedence);; 1
G11C0011240000 using capacitors (G11C0011220000 takes precedence;using a combination of semiconductor devices and capacitors G11C0011340000, e.g. G11C0011400000) 1
G11C0011260000 using discharge tubes 1
G11C0011280000 using gas-filled tubes 1
G11C0011300000 using vacuum tubes (G11C0011230000 takes precedence);; 1
G11C0011340000 using semiconductor devices 1
G11C0011350000 with charge storage in a depletion layer, e.g. charge coupled devices 1
G11C0011360000 using diodes, e.g. as threshold elements 1
G11C0011380000 using tunnel diodes 1
G11C0011390000 using thyristors 1
G11C0011400000 using transistors 1
G11C0011401000 forming cells needing refreshing or charge regeneration, i.e. dynamic cells 1
G11C0011402000 with charge regeneration individual to each memory cell, i.e. internal refresh 1