ข้อมูลสัญลักษณ์จำแนกการออกแบบผลิตภัณฑ์ระหว่างประเทศ


รหัส / code คำอธิบาย / code name Version
H03D0001180000 of semiconductor devices 1
H03D0001200000 with provision for preventing undesired type of demodulation, e.g. preventing anode detection in a grid detection circuit 1
H03D0001220000 Homodyne or synchrodyne circuits 1
H03D0001240000 for demodulation of signals wherein one sideband or the carrier has been wholly or partially suppressed 1
H03D0001260000 by means of transit-time tubes 1
H03D0001280000 by deflecting an electron beam in a discharge tube (H03D0001260000 takes precedence);; 1
H03D0003000000 Demodulation of angle-modulated oscillations (H03D0005000000, H03D0009000000, H03D0011000000 take precedence;frequency demodulators adapted for digitally modulated carrier systems, i.e. using frequency shift keying H04L0027140000; phase demodulators adapted for digitally modulated carrier systems, i.e. using phase shift keying H04L0027220000) 1
H03D0003020000 by detecting phase difference between two signals obtained from input signal (H03D0003280000-H03D0003320000;  take precedence);; 1
H03D0003040000 by counting or integrating cycles of oscillations 1
H03D0003060000 by combining signals additively or in product demodulators 1
H03D0003080000 by means of diodes, e.g. Foster-Seeley discriminator 1
H03D0003100000 in which the diodes are simultaneously conducting during the same half period of the signal, e.g. ratio detector 1
H03D0003120000 by means of discharge tubes having more than two electrodes 1
H03D0003140000 by means of semiconductor devices having more than two electrodes 1
H03D0003160000 by means of electromechanical resonators 1