ข้อมูลSemiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (H01L0031000000-H01L0047000000, H01L0051050000 take precedence;details other than of semiconductor bodies or of electrodes thereof H01L0023000000; devices consisting of a plurality of solid state components formed in or on a common substrate H01L0027000000)

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